Unraveling the Mysteries of Two-Dimensional Electron Gas (2DEG) in Gallium Nitride-based Heterostructures

What causes the formation of 2DEG?

The 2DEG forms at the interface of gallium nitride and aluminum gallium nitride due to the unique crystal structures and polarization effects.

How does mechanical stress impact polarization in gallium nitride?

Mechanical stress can change the angle between the bonds of gallium and nitrogen atoms, leading to the creation of a polarization vector.

What is the significance of 2DEG in electronic devices?

The properties of 2DEG make it highly desirable for high-electron-mobility transistors and other electronic applications.

How does the strain between gallium nitrate and indium gallium nitrate affect electron propagation?

The strain causes the Fermi level to be in the middle, resulting in a bending of the energy band and hindering electron propagation without doping.

Why does the 2DEG form a bound plane at the interface?

The Fermi levels of the trap sites and gallium nitride are far apart, creating a need for equilibrium, leading to the formation of the bound plane of 2DEG.