Understanding Hetero Structure Devices: Key Points and FAQs

What are the different bias conditions for hetero structure devices?

There are four bias conditions, including zero bias, normally on, and increasing drain bias.

What is the role of the drift region in hetero structure devices?

The drift region is the part of the transistor between the gate and the drain, where the electric field is highest.

How thick is the drift region in hetero structure devices?

The thickness of the drift region is typically between 10 and 20 microns.

What are traps in hetero structure devices?

Defects in the interface between silicon nitride and the gate cap layer, known as traps, can act as reservoirs of carriers and provide electrons to the structure.

What are the advantages of gallium nitride on silicon?

Gallium nitride on silicon has the advantage of being able to use different substrates, but there are problems with lattice mismatch and coefficient of temperature expansion.